SI1428EDH features ? halogen-free according to iec 61249-2-21 definition ?trenchfet ? power mosfet ? typical esd protection 2000 v hbm ? 100 % r g tested ? compliant to rohs directive 2002/95/ec applications ? portable devices - load switch - battery switch ? load switch for motors, relays and solenoids product summary v ds (v) r ds(on) ( ? )i d (a) a q g (typ.) 30 0.045 at v gs = 10 v 4 4 nc 0.049 at v gs = 4.5 v 4 0.060 at v gs = 2.5 v 4 notes: a. package limited, t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. maximum under steady stat e conditions is 125 c/w. absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 12 continuous drain current (t j = 150 c) t c = 25 c i d 4 a a t c = 70 c 4 a t a = 25 c 4 a, b, c t a = 70 c 3.7 b, c pulsed drain current (t = 300 s) i dm 20 continuous source-drain diode current t c = 25 c i s 2.3 a t a = 25 c 1.3 b, c maximum power dissipation t c = 25 c p d 2.8 w t c = 70 c 1.8 t a = 25 c 1.56 b, c t a = 70 c 1.0 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c markin g code as xx lot tracea b ility and date code part # code yy sot-363 sc-70 (6-leads) 6 4 1 2 3 5 top v ie w d d g d d s orderin g information: si142 8 edh-t1-ge3 (lead (p b )-free and halogen-free) d s g r thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, d t ? 5 s r thja 60 80 c/w maximum junction-to-foot (drain) steady state r thjf 34 45 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification vishay siliconix SI1428EDH new product document number: 67825 s11-0861-rev. a, 02-may-11 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 30 v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ?trenchfet ? power mosfet ? typical esd protection 2000 v hbm ? 100 % r g tested ? compliant to rohs directive 2002/95/ec applications ? portable devices - load switch - battery switch ? load switch for motors, relays and solenoids product summary v ds (v) r ds(on) ( : )i d (a) a q g (typ.) 30 0.045 at v gs = 10 v 4 4 nc 0.049 at v gs = 4.5 v 4 0.060 at v gs = 2.5 v 4 notes: a. package limited, t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. maximum under steady stat e conditions is 125 c/w. absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 12 continuous drain current (t j = 150 c) t c = 25 c i d 4 a a t c = 70 c 4 a t a = 25 c 4 a, b, c t a = 70 c 3.7 b, c pulsed drain current (t = 300 s) i dm 20 continuous source-drain diode current t c = 25 c i s 2.3 a t a = 25 c 1.3 b, c maximum power dissipation t c = 25 c p d 2.8 w t c = 70 c 1.8 t a = 25 c 1.56 b, c t a = 70 c 1.0 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c markin g code as xx lot tracea b ility and date code part # code yy sot-363 sc-70 (6-leads) 6 4 1 2 3 5 top v ie w d d g d d s orderin g information: si142 8 edh-t1-ge3 (lead (p b )-free and halogen-free) d s g r thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, d t d 5 s r thja 60 80 c/w maximum junction-to-foot (drain) steady state r thjf 34 45
notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not s ubject to production testing. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 30 v v ds temperature coefficient ? v ds /t j i d = 250 a 23 mv/c v gs(th) temperature coefficient ? v gs(th) /t j - 3.2 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.6 1.3 v gate-source leakage i gss v ds = 0 v, v gs = 4.5 v 0.5 a v ds = 0 v, v gs = 12 v 25 zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 v ds = 30 v, v gs = 0 v, t j = 55 c 10 on-state drain current a i d(on) v ds ? 5 v, v gs = 4.5 v 15 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 3.7 a 0.036 0.045 ? v gs = 4.5 v, i d = 3.6 a 0.040 0.049 v gs = 2.5 v, i d = 1.5 a 0.048 0.060 forward transconductance a g fs v ds = 15 v, i d = 3.7 a 17 s dynamic b total gate charge q g v ds = 15 v, v gs = 10 v, i d = 4.7 a 8.8 13.5 nc v ds = 15 v, v gs = 4.5 v, i d = 4.7 a 46 gate-source charge q gs 0.9 gate-drain charge q gd 1.1 gate resistance r g f = 1 mhz 0.4 2 4 k ? tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 4.1 ? i d ? 3.7 a, v gen = 4.5 v, r g = 1 ? 0.29 0.58 s rise time t r 0.4 0.8 turn-off delaytime t d(off) 1.9 3.8 fall time t f 0.75 1.5 tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 4.1 ? i d ? 3.7 a, v gen = 10 v, r g = 1 ? 0.1 0.2 rise time t r 0.15 0.3 turn-off delaytime t d(off) 36 fall time t f 0.75 1.5 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 2.3 a pulse diode forward current i sm 20 body diode voltage v sd i s = 3.7 a, v gs = 0 v 0.85 1.2 v body diode reverse recovery time t rr i f = 3.7 a, di/dt = 100 a/s, t j = 25 c 12 25 ns body diode reverse recovery charge q rr 510 nc reverse recovery fall time t a 6.5 ns reverse recovery rise time t b 5.5 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com SI1428EDH product specification www.vishay.com 2 document number: 67825 s11-0861-rev. a, 02-may-11 vishay siliconix SI1428EDH new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. pulse test; pulse width d 300 s, duty cycle d 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 30 v v ds temperature coefficient ' v ds /t j i d = 250 a 23 mv/c v gs(th) temperature coefficient ' v gs(th) /t j - 3.2 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.6 1.3 v gate-source leakage i gss v ds = 0 v, v gs = 4.5 v 0.5 a v ds = 0 v, v gs = 12 v 25 zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 v ds = 30 v, v gs = 0 v, t j = 55 c 10 on-state drain current a i d(on) v ds t 5 v, v gs = 4.5 v 15 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 3.7 a 0.036 0.045 : v gs = 4.5 v, i d = 3.6 a 0.040 0.049 v gs = 2.5 v, i d = 1.5 a 0.048 0.060 forward transconductance a g fs v ds = 15 v, i d = 3.7 a 17 s dynamic b total gate charge q g v ds = 15 v, v gs = 10 v, i d = 4.7 a 8.8 13.5 nc v ds = 15 v, v gs = 4.5 v, i d = 4.7 a 46 gate-source charge q gs 0.9 gate-drain charge q gd 1.1 gate resistance r g f = 1 mhz 0.4 2 4 k : tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 4.1 : i d # 3.7 a, v gen = 4.5 v, r g = 1 : 0.29 0.58 s rise time t r 0.4 0.8 turn-off delaytime t d(off) 1.9 3.8 fall time t f 0.75 1.5 tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 4.1 : i d # 3.7 a, v gen = 10 v, r g = 1 : 0.1 0.2 rise time t r 0.15 0.3 turn-off delaytime t d(off) 36 fall time t f 0.75 1.5 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 2.3 a pulse diode forward current i sm 20 body diode voltage v sd i s = 3.7 a, v gs = 0 v 0.85 1.2 v body diode reverse recovery time t rr i f = 3.7 a, di/dt = 100 a/s, t j = 25 c 12 25 ns body diode reverse recovery charge q rr 510 nc reverse recovery fall time t a 6.5 ns reverse recovery rise time t b 5.5
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